693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Claverie, Alain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Crystallization of Amorphous N‐Doped Ge‐Rich GST Layers Deposited on a Polycrystalline GST Templatecitations
- 2023Multistep Crystallization of Ge‐Rich GST Unveiled by In Situ synchrotron X‐ray diffraction and (scanning) transmission electron microscopycitations
- 2022Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealingcitations
- 2022Atomic scale microstructural insights of superconducting β-tungsten thin filmscitations
- 2022Crucial role of oxygen on the bulk and surface electronic properties of stable β phase of tungstencitations
- 2022On the electrical properties of Ge-rich GeSbTe alloys: an experimental and numerical multi-scale approach
- 2022Revealing the Impact of Prestructural Ordering in GaSb Thin Filmscitations
- 2022Crystallization of Ge-Rich GeSbTe Alloys ; Crystallization of Ge-Rich GeSbTe Alloys: The Riddle Is Solvedcitations
- 2021Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5citations
- 2020On the charge transport mechanisms in Ge-rich GeSbTe alloyscitations
- 2020Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETscitations
- 2020Impact of Nitrogen on the Crystallization and Microstructure of Ge‐Rich GeSbTe Alloyscitations
- 2019Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloyscitations
- 2017Retraction: “Atomistic simulation of damage accumulation and amorphization in Ge” [J. Appl. Phys. 117 , 055703 (2015)]
- 2016On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devicescitations
- 2015Atomistic simulation of damage accumulation and amorphization in Gecitations
- 2015Modelling of point defect complex formation and its application to H+ ion implanted siliconcitations
- 2010Amorphization, recrystallization and end of range defects in germaniumcitations
- 2009Modeling and experiments on diffusion and activation of phosphorus in germaniumcitations
- 2008Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate
- 2008Diffusion and activation of phosphorus in germaniumcitations
- 2006Laser annealing for n+/p junction formation in germaniumcitations
- 2005Electrical properties of nanocontacts on silicon nanoparticles embedded in thin SiO2 synthesized by ultralow energy ion implantationcitations
- 2005Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantationcitations
- 2005Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applicationscitations
- 2005Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitorcitations
- 2005The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantationcitations
- 2005Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applicationscitations
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