693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kerdilès, Sébastien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
- 2024C54-TiSi$_2$ formation using nanosecond laser annealing of A-Si/Ti/A-Si stackscitations
- 2024Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers
- 2024Formation of Highly Doped and Defect-Free P-Type Junctions in SiC by Using High Temperature Implants and UV-Laser Annealing
- 2024Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
- 2023Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloyscitations
- 2023Surface-localized 15R formation on 4H-SiC (0001) Si-Face by laser annealing for power n-type MOSFETs
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2022Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealingcitations
- 2022Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealingcitations
Places of action
| Organizations | Location | People |
|---|