693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Richardeau, Frédéric
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT
- 2024Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress
- 2023Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
- 2023Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]citations
- 2023Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM [1st Prize Winner - Best Paper Awards ESREF'23]citations
Places of action
| Organizations | Location | People |
|---|