693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Turban, Pascal
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2022Growth and multi-scale properties of hybrid magnetic tunnel junctions: towards the control of spinterfaces
- 2022Enhanced piezoelectricity in lead-free halide perovskite nanocomposite for self-powered wireless electronicscitations
- 2022Poly(vinylidene fluoride)-Stabilized Black γ-Phase CsPbI3Perovskite for High-Performance Piezoelectric Nanogeneratorscitations
- 2021III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Origin of weak Fermi level pinning at the graphene/silicon interfacecitations
- 2019Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivationcitations
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2016Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopycitations
- 2016X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
- 2016Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications
- 20163D GaP/Si(001) growth mode and antiphase boundaries
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2010Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)citations
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