693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bertru, Nicolas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Large onset potential improvement with an epitaxial GaAs/Si photocathode for solar H2 production.
- 2024Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.citations
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Massive Onset Potential Shifting with an Epitaxial GaAs/Si Photocathode for Solar H2 Production
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2024Massive onset potential shifting with an epitaxial GaAs/Si photocathode for solar H2 production
- 2022Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levelscitations
- 2021III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2019Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvestingcitations
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2012Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on siliconcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2010Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substratecitations
- 2006Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs depositedcitations
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