693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hartmann, J. M.
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Topics
Publications (9/9 displayed)
- 2024Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDscitations
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2022Recrystallization of thick implanted GeSn layers with nanosecond laser annealingcitations
- 2019Ultra-Low Threshold CW Lasing in Tensile Strained GeSn Microdisk Cavities
- 2019Nano-Heteroepitaxy An Investigation of SiGe Pillars Coalescence
- 2017Germanium based photonic components toward a full silicon/germanium photonic platformcitations
- 2017Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductorscitations
- 2015Optical Transitions in Direct-Bandgap Ge 1– x Sn x Alloyscitations
- 2009Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)mathsemicolon Ge surface passivation by Sicitations
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