693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Planson, Dominique
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substratescitations
- 2023Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2022Design of a test package for high voltage SiC diodes
- 2020Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistorcitations
- 2016Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applicationscitations
- 2016A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase ; Une étude de la température de contact ohmique sur SiC de type p à basée sur la phase Ti3SiC2citations
- 2013Die attach using silver sintering. Practical implementation and analysiscitations
- 2013Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodescitations
- 2012Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodescitations
- 20124H-SiC P + N UV Photodiodes : A Comparison between Beam and Plasma Doping Processescitations
- 2012SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurementscitations
- 2012Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiCcitations
- 2012Edge termination design improvements for 10 kV 4H-SiC bipolar diodes
- 2011Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiCcitations
- 2010High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layercitations
- 2003Optimal layout for 6H-SiC VJFET controlled current limiting device
- 2003Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
- 2002Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFETcitations
- 2002A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effectscitations
- 2001Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
- 2001Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Places of action
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