693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Caroff, Philippe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (27/27 displayed)
- 2021Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofinscitations
- 2020Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopycitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductorcitations
- 2017Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxycitations
- 2017Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxycitations
- 2016Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowirescitations
- 2016Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowirescitations
- 2015InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologycitations
- 2015InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologycitations
- 2014Gold-free ternary III-V antimonide nanowire arrays on silicon : twin-free down to the first bilayercitations
- 2012Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.citations
- 2012Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junctioncitations
- 2012Phonon transport and thermoelectricity in defect-engineered InAs nanowirescitations
- 2012Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniquescitations
- 2011Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowirescitations
- 2011Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowirescitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2011InSb Nanowire Field-Effect Transistors and Quantum-Dot Devicescitations
- 2010Crystal Phase Engineering in Single InAs Nanowires.citations
- 2010Control of III-V nanowire crystal structure by growth parameter tuningcitations
- 2008High Quality InAs/InSb nanowire heterostructrues grown by metalorganic vapour phase epitaxycitations
- 2006Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs depositedcitations
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
- 2005Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
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