693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Daudin, Bruno
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2021The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubescitations
- 2019Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxycitations
- 2017Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric fieldcitations
- 2016InGaN nanowires with high InN molar fraction: growth, structural and optical propertiescitations
- 2016A novel way of measuring lifetime at the nanometer scale using specific fast electron‐matter interactions
- 2016Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field
- 2014Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowirescitations
- 2012Anticrossing of axial and planar surface-related phonon modes in Raman spectra of self-assembled GaN nanowirescitations
- 2000Mg-modified surface kinetics of the GaN growth by molecular beam epitaxycitations
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