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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Patriarche, G.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (94/94 displayed)
- 2024Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2022MS37 Advances in Structure determination of new materials by multi-technique approach including imaging techniques MS37-05 Structural elucidation of novel metal-organic frameworks using 3D electron diffraction
- 2021Photo-Activated Phosphorescence of Ultrafine ZnS:Mn Quantum Dots: On the Lattice Strain Contributioncitations
- 2020Structural, vibrational, and magnetic properties of self-assembled CoPt nanoalloys embedded in SrTiO 3citations
- 2020Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloyscitations
- 2020Single crystalline boron rich B(Al)N alloys grown by MOVPEcitations
- 2019Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materialscitations
- 2019Ultra-Low Threshold CW Lasing in Tensile Strained GeSn Microdisk Cavities
- 2019Polarization- and diffraction-controlled second-harmonic generation from semiconductor metasurfacescitations
- 2018Ultrathin Ni nanowires embedded in SrTiO 3 : Vertical epitaxy, strain relaxation mechanisms, and solid-state amorphizationcitations
- 2018Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperaturecitations
- 2017In situ passivation of GaAsP nanowirescitations
- 2016Local probing of the interfacial strength in InP/Si substructures
- 2016Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Sicitations
- 2016Selective CO 2 methanation on Ru/TiO 2 catalysts: unravelling the decisive role of the TiO 2 support crystal structurecitations
- 2016Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regionscitations
- 2016X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
- 2016Selective CO2 methanation on Ru/TiO2 catalysts: unravelling the decisive role of the TiO2 support crystal structurecitations
- 20163D GaP/Si(001) growth mode and antiphase boundaries
- 2015Oxide-free bonding of III-V-based material on Silicon and nano-structuration of the hybrid waveguide for advanced optical functionscitations
- 2014Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activationcitations
- 2014Instrumented nanoindentation and scanning electron transmission microscopy applied to the study of the adhesion of InP membranes heteroepitaxially bonded to Sicitations
- 2014Plasticity and fracture of InP/Si substructures
- 2014Self-catalyzed InP nanowires grown by VLS-MBE on silicon for photonics
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2014Electrical transport across the heterointerface of InP membranes bonded oxide-free on Sicitations
- 2013Heteroepitaxial bonding of Si for hybrid photonic devicescitations
- 2013Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentationcitations
- 2013Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on siliconcitations
- 2012Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Sicitations
- 2012Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopycitations
- 2011Selective growth of site-controlled quantum dots
- 2011Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots
- 2011Structural analysis of site-controlled InAs/InP quantum dotscitations
- 2011Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 μm
- 2010One step nano-selective area growth of localized InAs/InP quantum dots for single photon source applications
- 2010Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μmcitations
- 2009Surface emitting photonic crystal mid-infrared quantum cascade lasers
- 2009Surface-plasmon distributed-feedback quantum cascade lasers operating pulsed, room temperaturecitations
- 2009Single photon sources using InAs/InP quantum dotscitations
- 2009Mid/far-infrared semiconductor devices exploiting plasmomic effects
- 2009Inductively coupled plasma etching of GaAs suspended photonic crystal cavitiescitations
- 2009Silicon nanowires coated with silver nanostructures as ultrasensitive interfaces for surface-enhanced Raman spectroscopycitations
- 2009Surface-emitting quantum cascade lasers with metallic photonic-crystal resonatorscitations
- 2008Smooth sidewall in InP-based photonic crystal membrane etched by N <inf>2</inf> -based inductively coupled plasmacitations
- 2008One step nano slective area growth of localized InAs/InP quantum dots for single photon source applications
- 2008One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applicationscitations
- 2008De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layercitations
- 2008Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modescitations
- 2008Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modescitations
- 2008Surface-plasmons on structured metallic surfaces: Theoretical analysis, applications to mid-infrared quantum cascade lasers and a-SNOM survey
- 2008Exploration of the ultimate patterning potential achievable with focused ion beams
- 2008Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 μm applications: Growth, structural, and optical propertiescitations
- 2008Photonic crystal nanolasers with controlled spontaneous emission
- 2008InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy
- 2008Tuning InAs/InP(001) quantum dot emission from 1.55 TO 2 mu;m by varying cap-layer growth rate in metalorganic vapor phase epitaxy
- 2007Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(0 0 1) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxycitations
- 2007InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
- 2007Density of InAsInP (001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth ratescitations
- 2007Submicron-diameter semiconductor pillar microcavities with very high quality factorscitations
- 2006Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxycitations
- 2006Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAsInP (001) quantum dotcitations
- 2006Indium incorporation in In-rich Inx Ga1-x As GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dotscitations
- 2006Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materialscitations
- 2006InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
- 2006Quality factor of micropillar cavity
- 2006Thermodynamical analysis of the shape and size dispersion of InAs InP (001) quantum dotscitations
- 2006Initial stage of the overgrowth of InP on InAs/InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edgescitations
- 2006Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the InAs/InP (001) system: Experiment and theorycitations
- 2006Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE
- 2005Stress-driven self-ordering of III-V nanostructurescitations
- 2005Stress-engineered orderings of self-assembled III-V semiconductor nanostructurescitations
- 2005InAs/InP (001) quantum dots emitting at 1.55 μm grown by low-pressure metalorganic vapor-phase epitaxycitations
- 2005Electroabsorption spectroscopy of GeSi self-assembled islandscitations
- 2005Reactive-ion etching of high- Q and submicron-diameter GaAsAlAs micropillar cavitiescitations
- 2005Dislocation networks adapted to order the growth of III-V semiconductor nanostructurescitations
- 2004Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dotscitations
- 2004Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate
- 2004Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructurescitations
- 2004Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: Reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injectioncitations
- 2003MOVPE growth and characterization of long-wavelength emitting quantum dots based lasers at 300 K
- 2003Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islandscitations
- 2003Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islandscitations
- 2002Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μmcitations
- 2002Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2002Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islandscitations
- 2001Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dotscitations
- 2001Bimodal distribution of indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2001Normal-incidence (001) second-harmonic generation in ordered Ga <inf>0.5</inf>In<inf>0.5</inf>Pcitations
- 2000Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor depositioncitations
- 2000GaAsSbN: A material for 1.3-1.55 μm emission
- 2000GaAs/GaAs twist-bonding for compliant substrates: Interface structure and epitaxial growthcitations
- 2000Optical and structural properties of 1.3 μm emitting InAs/GaAs quantum dots grown by LP-MOVPE as a function of the re-growth temperature
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