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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Largeau, L.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Microstructural modifications induced by He implantation at elevated temperature in AlN
- 2020Erbium-doped yttria-stabilised zirconia thin films grown by pulsed laser deposition for photonic applicationscitations
- 2016Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regionscitations
- 2016X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
- 20163D GaP/Si(001) growth mode and antiphase boundaries
- 2015Interdiffusion processes at irradiated Cr/Si interfacescitations
- 2014Strain engineering in germanium microdiskscitations
- 2014High tensile strain transfer into germanium microdisks using all-around strained SiN
- 2014Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin filmcitations
- 2013Heteroepitaxial bonding of Si for hybrid photonic devicescitations
- 2013Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layerscitations
- 2013Recent advances in germanium emission [invited]citations
- 2013Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on siliconcitations
- 2012Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Sicitations
- 2012Strain engineering for optical gain in germaniumcitations
- 2012Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopycitations
- 2011Selective growth of site-controlled quantum dots
- 2011Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots
- 2011Structural analysis of site-controlled InAs/InP quantum dotscitations
- 2011Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 μm
- 2011P and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactorcitations
- 2011High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor depositioncitations
- 2010Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloyscitations
- 2010Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic propertiescitations
- 2010Loss-reduction in midinfrared photonic crystal quantum cascade lasers using metallic waveguidescitations
- 2010Injection of midinfrared surface plasmon polaritons with an integrated devicecitations
- 2010One step nano-selective area growth of localized InAs/InP quantum dots for single photon source applications
- 2008Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modescitations
- 2007Dependence of magnetic anisotropies and critical temperatures on the hole concentration in ferromagnetic GaMnAs thin filmscitations
- 2005InAs/InP (001) quantum dots emitting at 1.55 μm grown by low-pressure metalorganic vapor-phase epitaxycitations
- 2004Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate
- 2004Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructurescitations
- 2004Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: Reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injectioncitations
- 2002GaNAsSb : How does it compare with other dilute III-V nitride alloys ?citations
- 2002Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μmcitations
- 2001Bimodal distribution of indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2000GaAsSbN: A material for 1.3-1.55 μm emission
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