693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gil, Bernard
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (30/30 displayed)
- 2024Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green range
- 2024The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barrierscitations
- 2023A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fieldscitations
- 2022Determination of the direct bandgap value in In4Se3 thin filmscitations
- 2022Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopycitations
- 2021Band gap measurements of monolayer h-BN and insights into carbon-related point defectscitations
- 2021Band gap measurements of monolayer h-BN and insights into carbon-related point defectscitations
- 2019Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phasecitations
- 2019Shallow and deep levels in carbon-doped hexagonal boron nitride crystalscitations
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2018Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Wellcitations
- 2017Stacking fault and defects in single domain multilayered hexagonal boron nitridecitations
- 2017Direct observation of the band structure in bulk hexagonal boron nitridecitations
- 2014Excitonic recombination dynamics in non-polar and semi-polar AlGaN/GaN multiple QWs
- 2013Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structurescitations
- 2012Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum wellcitations
- 2011Quantitative interpretation of the excitonic splittings in aluminum nitridecitations
- 2011Quantitative interpretation of the excitonic splitting in aluminum nitridecitations
- 2010Excitonic Splittings in aluminum nitride
- 2010Hydrostatic deformation potentials and the question of exciton binding energies and splittings in aluminium nitridecitations
- 2010Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocompositescitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2010Pressure cycling of InN to 20 GPa: In situ transport properties and amorphizationcitations
- 2006Superconductivity of InN as an intrinsic propertycitations
- 2005Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor depositioncitations
- 2005k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructurescitations
- 2004Carrier recombination processes in GaAsN: from the dilute limit to alloyingcitations
- 2003Raman scattering in large single indium nitride dots: Correlation between morphology and straincitations
- 2003High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.
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