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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Williams, J. S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2020Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloyscitations
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
- 2016Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloyscitations
- 2016Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap materialcitations
- 2016Dependence of short and intermediate-range order on preparation in experimental and modeled pure a-Sicitations
- 2015The influence of hold time on the onset of plastic deformation in siliconcitations
- 2015Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagationcitations
- 2014Phase transformation pathways in amorphous germanium under indentation pressurecitations
- 2012The indentation hardness of silicon measured by instrumented indentationcitations
- 2011Impurity-free seeded crystallization of amorphous silicon by nanoindentation
- 2010Ion-Beam-Induced Amorphization and Epitaxial Crystallization of Siliconcitations
- 2010Electrical properties of Si-XII and Si-III formed by nanoindentationcitations
- 2009Nanoindentation of ion-implanted crystalline germaniumcitations
- 2008Thickness-dependent phase transformation in nanoindented germanium thin filmscitations
- 2007Patterning of silicon by indentation and chemical etchingcitations
- 2006Phase transformations induced by spherical indentation in ion-implanted amorphous siliconcitations
- 2005Ion irradiation-induced disordering of semiconductorscitations
- 2004Ion-beam-defect processes in group-III nitrides and ZnOcitations
- 2004Phase transformations induced in relaxed amorphous silicon by indentation at room temperaturecitations
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003In situ electrical characterization of phase transformations in Si during indentationcitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Electrical isolation of ZnO by ion bombardmentcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2002In-situ electrical characterization of Si during nanoindentation
- 2002Production and processing of semiconductor nanocrystals and nanostructures for photonic applications
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001Electrical isolation of GaN by MeV ion irradiationcitations
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Mechanical deformation in silicon by micro-indentationcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Transmission electron microscopy observation of deformation microstructure under spherical indentation in siliconcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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