693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wiemer, C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2022Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Siliconcitations
- 2022Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowirescitations
- 2022Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substratecitations
- 2021Large-Area MOVPE Growth of Topological Insulator Bi2Te3Epitaxial Layers on i-Si(111)citations
- 2021Phase change Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires by metal organic chemical vapor depositioncitations
- 2021MOCVD growth of GeTe/Sb2Te3 core–shell nanowirescitations
- 2021Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)citations
- 2020ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3citations
- 2020ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3citations
- 2020Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulatorcitations
- 2016Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowirescitations
- 2014Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition
- 2014Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor depositioncitations
- 2013A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me = Zr, Hf)citations
- 2013Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVDcitations
- 2012Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrodecitations
- 2011Au-catalyzed self assembly of GeTe nanowires by MOCVDcitations
- 2011Dynamics of laser-induced phase switching in GeTe filmscitations
- 2011Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectricscitations
- 2011Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)citations
- 2011Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectricscitations
- 2010O(3)-based atomic layer deposition of hexagonal La(2)O(3) films on Si(100) and Ge(100) substratescitations
- 2010O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substratescitations
- 2009Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stackscitations
- 2009Hot-wire chemical vapor growth and characterization of crystalline GeTe filmscitations
- 2008Amorphization dynamics of Ge2 Sb2 Te5 films upon nano- and femtosecond laser pulse irradiationcitations
- 2008The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robincitations
- 2004Structural characterization of epitaxial Y2O3 on Si (001) and of the Y2O3/Si interfacecitations
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