693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lamperti, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowirescitations
- 2022Control of magnetoelastic coupling in Ni/Fe multilayers using He + ion irradiationcitations
- 2021Geometrical Engineering of Giant Optical Dichroism in Rippled MoS2 Nanosheetscitations
- 2021Tailoring the Phase in Nanoscale MoTe2Grown by Barrier-Assisted Chemical Vapor Depositioncitations
- 2020Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layerscitations
- 2019Enhancement of the Dzyaloshinskii-Moriya interaction and domain wall velocity through interface intermixing in Ta/CoFeB/MgOcitations
- 2018Interface phenomena between CdTe and ZnTe:Cu back contactcitations
- 2014Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition
- 2014Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor depositioncitations
- 2013Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memoriescitations
- 2013A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me = Zr, Hf)citations
- 2013Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition.citations
- 2012Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrodecitations
- 2011Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regimecitations
- 2011Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stackcitations
- 2011Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layerscitations
- 2011Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam depositioncitations
- 2010CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport propertiescitations
- 2008Modifications of yttria fully stabilized zirconia thin films by ion irradiation in the inelastic collision regimecitations
- 2008The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robincitations
Places of action
| Organizations | Location | People |
|---|