693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Grandjean, Nicolas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2019Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodescitations
- 2013Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substratescitations
- 2012On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substratescitations
- 2011Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures
- 2011High temperature stability of nitride-based power HEMTs
- 2011Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopycitations
- 2011Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substratecitations
- 2011Testing the temperature limits of GaN-based HEMT devices
- 2010One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells.citations
- 2009Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaNcitations
- 2009Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxycitations
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