693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Slesazeck, S.
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Topics
Publications (7/7 displayed)
- 2022Physics-based modeling of a bi-layer Al2O3/Nb2O5 analog memristive devicecitations
- 2022Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxidecitations
- 2021Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitorscitations
- 2015Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal-insulator-metal stackscitations
- 2014Analog resistive switching behavior of Al/Nb<inf>2</inf>O<inf>5</inf>/Al devicecitations
- 2013Room temperature fabricated NbO<inf>x</inf>/Nb<inf>2</inf>O<inf>5</inf> memory switching device with threshold switching effectcitations
- 2012Filamentary resistive switching in amorphous and polycrystalline Nb <sub>2</sub>O <sub>5</sub> thin filmscitations
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