693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Raynaud, Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substratescitations
- 2016A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase ; Une étude de la température de contact ohmique sur SiC de type p à basée sur la phase Ti3SiC2citations
- 2012SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurementscitations
- 2011Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
- 2002A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effectscitations
- 2001Silica films on silicon carbide: a review of electrical properties and device applications
- 2001Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
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