693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Houssa, Michel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2016Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices
- 2016Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere
- 2013Liquid-Phase Adsorption of Sulfur on Germanium: Reaction Mechanism and Atomic Geometrycitations
- 2011Universal stress-defect correlation at (100)semiconductor/oxide interfacescitations
- 2005Electrical characterization of capacitors with AVD-deposited hafnium silicates as high-k gate dielectric
- 2005Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectricscitations
- 2005HfO2 high-kappa gate dielectrics on Ge(100) by atomic oxygen beam deposition
- 2002Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
- 2002Electron spin resonance analysis of interfacial Si dangling bond defects in stacks of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si
- 2002Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
Places of action
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