693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Houssa, M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2020Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit
- 2014First-principles study of strained 2D MoS2citations
- 2013Optimization of WAl2O3Cu(-Te) material stack for high-performance conductive-bridging memory cellscitations
- 2012Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2citations
- 2009Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) studycitations
- 2008Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channelscitations
Places of action
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