693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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De Gendt, Stefan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (36/36 displayed)
- 2024Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospectscitations
- 2021A chemisorbed interfacial layer for seeding atomic layer deposition on graphitecitations
- 2017Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H-2 Plasma, and H2S
- 2016Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures
- 2016Templated DSA with EUV-exposed pre-patterns
- 2015Chemical Composition of an Aqueous Oxalato-/Citrato-VO2+ Solution as Determinant for Vanadium Oxide Phase Formationcitations
- 2015Towards reliable directed self-assembly lithography for future CMOS scaling: A study on variability of cylindrical patterns
- 2015The Formation Mechanism of 3D Porous Anodized Aluminum Oxide Templates from an Aluminum Film with Copper Impurities
- 2014Quantitative characterization of pore stuffing and unstuffing for postporosity plasma protection of low-k materialscitations
- 2012Carbon nanotube growth from Langmuir-Blodgett deposited Fe₃O₄ nanocrystalscitations
- 2011Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnectscitations
- 2011Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultra-low-k PECVD dielectricscitations
- 2010Improving Mechanical Robustness of Ultra-low-k SiOCH PECVD Materials
- 2010Strontium niobate high-k dielectrics: Film deposition and material propertiescitations
- 2010High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers
- 2010Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics
- 2010Dielectric response of Ta2O5, Nb2O5, and NbTaO5 from first-principles investigationscitations
- 2010Effect of UV-wavelength on Hardening Process of Porogen-containing and Porogen-free Ultra-low-k PECVD Glasses
- 2010Properties of Ultrathin High Permittivity (Nb1-xTax)(2)O-5 Films Prepared by Aqueous Chemical Solution Depositioncitations
- 2009Thermally stable high effective work function TaCN thin films for metal gate electrode applications
- 2009Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions
- 2009Alternative high-k dielectrics for semiconductor applicationscitations
- 2008HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle
- 2008Silicon orientation effects in the atomic layer deposition of Hafnium oxide
- 2008Aqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric applicationcitations
- 2007Atomic layer deposition of hafnium silicate gate dielectric layers
- 2007Flatband voltage shift of the ruthenium gate stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface
- 2006Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
- 2006PVD-high-k gate dielectrics with FUSI gate and influence of PDA treatment on on-state drive current
- 2005Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
- 2005Electrical characterization of capacitors with AVD-deposited hafnium silicates as high-k gate dielectric
- 2004Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
- 2003Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices
- 2002Characterisation of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
- 2002Miscibility of amorphous ZrO2-Al2O3 binary alloy
- 2000Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on Si wafer surfaces
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