693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Janzén, Erik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2018Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Speciescitations
- 2017Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistrycitations
- 2017Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaNcitations
- 2017Ab Initio Study of Growth Mechanism of 4H-SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3citations
- 2016A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNX thin film growth with different inert gasescitations
- 2015Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbidecitations
- 2015Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interfacecitations
- 2015Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InNcitations
- 2014Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theorycitations
- 2014Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)citations
- 2014Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopycitations
- 2013Role of screening in the density functional applied to transition-metal defects in semiconductorscitations
- 2013Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructurecitations
- 2013Controlled growth of hexagonal GaN pyramids by hot-wall MOCVDcitations
- 2013Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computationscitations
- 2013Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effectcitations
- 2012Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodescitations
- 2012High-quality AlN layers grown by hot-wall MOCVD at reduced temperaturescitations
- 2012Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiCcitations
- 2010Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitorscitations
- 2009Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structurescitations
- 2008Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substratecitations
Places of action
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