693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Soltani, Ali
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2021New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistorcitations
- 2020Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substratecitations
- 2018A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etchingcitations
- 2014Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared rangecitations
- 2014Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared rangecitations
- 2014Electronic and physico-chemical properties of nanometric boron delta-doped diamond structurescitations
- 2014Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranescitations
- 2014High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-dopingcitations
- 2013Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxycitations
- 2013Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxycitations
- 2012Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical studycitations
Places of action
| Organizations | Location | People |
|---|