693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Scholz, F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Development of Iron Speciation Reference Materials for Palaeoredox Analysis
- 2017Implantation damage formation in a-, c- and m-plane GaNcitations
- 2017Investigation of machinability of klein dried oil palm wood with regard to production of solid wood products
- 2015Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire
- 2015Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (1122) GaN layers grown from the sidewall of an r-patterned sapphire substratecitations
- 2012Strain and defects in Si-doped (Al)GaN epitaxial layerscitations
- 2011Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells
- 2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study ; Sauerstoff induzierte Verspannungshomogenisierung in AlN Nukleationsschichten und deren Einfluss auf MOVPE GaN Schichten auf Saphir: Eine Röntgendiffraktometrie-Studiecitations
- 2008Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facetscitations
- 2006Morphology and microstructure of a-plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG)citations
Places of action
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