693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ruterana, Pierre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2024Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green range
- 2022Optimized ohmic contacts for InAlGaN/GaN HEMTs
- 2022Stress relaxation in III-V nitrides: investigation of metallic atoms interaction with the N-vacancycitations
- 2018Optimized ohmic contacts for InAlGaN/GaN HEMTs
- 2018A Theoretical Investigation of the Miscibility and Structural Properties of In x Al y Ga 1−x−y N Alloyscitations
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2017Synthesis and characterization of nanocomposites films with graphene oxide and reduced graphene oxide nanosheetscitations
- 2017Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscopecitations
- 2012Carrier localization in InN/InGaN multiple-quantum wells with high In-contentcitations
- 2011A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperaturecitations
- 2011Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffractioncitations
- 2010The microstructure and properties of InN layers
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2010Extended defects in semipolar (1122) gallium nitride
- 2010Extended defects in semipolar (1122) gallium nitride
- 2009Structural, electronic and optical properties of the wide-gap Zn1-xCdxTe ternary alloys
- 2009Strain relaxation in short-period polar GaN/AIN superlatticescitations
- 2008A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation
- 2008Formation of a low energy grain boundary in ZnO: The structural unit concept in hexagonal symmetry materialscitations
- 2008A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 °C
- 2008Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties
- 2006Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN
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