693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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González Díaz, Germán
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2022Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2022On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodescitations
- 2016Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signaturescitations
- 2016Limitations of high pressure sputtering for amorphous silicon depositioncitations
- 2015Meyer Neldel rule application to silicon supersaturated with transition metalscitations
- 2014Room-temperature operation of a titanium supersaturated silicon-based infrared photodetectorcitations
- 2013Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
- 2013Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band materialcitations
- 2013Electrical decoupling effect on intermediate band Ti-implanted silicon layerscitations
- 2013Electrical decoupling effect on intermediate band Ti-implanted silicon layerscitations
- 2013Double ion implantation and pulsed laser melting processes for third generation solar cellscitations
- 2012Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantationcitations
- 2012Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Materialcitations
- 2012Interstitial Ti for intermediate band formation in Ti-supersaturated siliconcitations
- 2012Interstitial Ti for intermediate band formation in Ti-supersaturated siliconcitations
- 2011Two-layer Hall effect model for intermediate band Ti-implanted siliconcitations
- 2009Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stackscitations
- 2009Electronic transport properties of Ti-impurity band in Sicitations
- 2008Titanium doped silicon layers with very high concentrationcitations
- 2007High-pressure reactively sputtered HfO2: Composition, morphology, and optical propertiescitations
- 2007Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectricscitations
- 2006Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysiscitations
- 2005A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer depositioncitations
- 2005On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVDcitations
- 2004Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devicescitations
- 2004Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma methodcitations
- 2004Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substratescitations
- 2003Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer filmscitations
- 2003Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz filmscitations
- 2003Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz filmscitations
- 2003Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InPcitations
- 2002Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistorscitations
- 2001Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopycitations
- 2001Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniquescitations
- 2001Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealingcitations
- 2000High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devicescitations
- 2000Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structurescitations
- 2000Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance techniquecitations
- 2000Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTS and conductance transient techniquescitations
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