693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Grandjean, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2016Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75Ncitations
- 2013Optical, structural, and morphological characterisation of epitaxial ZnO filas grown by pulsed-laser depositioncitations
- 2012Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.
- 2012Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum wellcitations
- 2012Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.
- 2011One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wellscitations
- 2010Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.
- 2010Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.citations
- 2010Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.
- 2009Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence.citations
- 2008Growth of device-quality ZnO films by pulsed-laser deposition
- 2008Lattice matched GaN/InAlN waveguides at λ = 1.55 μm grown by metalorganic vapor phase epitaxycitations
- 2007Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wellscitations
- 2004UV Metal Semiconductor Metal Detectors. A Robust Choice for (Al,Ga)N Based Detectors
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