693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Medjdoub, F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Process optimization of Fully Vertical GaN-on-Silicon PIN diodes
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructurecitations
- 2019Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTscitations
- 2019Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experimentcitations
- 2019The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTscitations
- 2018Optimized ohmic contacts for InAlGaN/GaN HEMTs
- 2010Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPEcitations
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