693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schroeder, T.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2022NaOCl Application after Acid Etching and Retention of Cervical Restorations: A 3-Year Randomized Clinical Trial
- 2017Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching propertiescitations
- 2017Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties
- 2017Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties
- 2017Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)citations
- 2016Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)citations
- 2016Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAMcitations
- 2015Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETscitations
- 2015Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars
- 2015Ba termination of Ge(001) studied with STM
- 2015Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopycitations
- 2015Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Sicitations
- 2014Structural Changes of Ultrathin $mathrm{Cub-PrO_2(111)/Si(111)}$ Films Due to Thermally Induced Oxygen Desorptioncitations
- 2014Towards forming-free resistive switching in oxygen engineered $HfO_{2−x}$citations
- 2013Surface morphology of ultrathin $hex-Pr_{2}O-{3}$ films on Si(1 1 1)citations
- 2012Hard X-ray Photoelectron Spectroscopy study of the electroforming in $Ti/HfO_{2}$-based resistive switching structurescitations
- 2011Post deposition annealing of praseodymia films on Si(111) at low temperaturescitations
- 2011Atomic-scale engineering of future high-k dynamic random access memory dielectricscitations
- 2009Postdeposition annealing induced transition from hexagonal $Pr_2O_3$ to cubic $PrO_2$ films on Si(111)citations
- 2009Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependencecitations
- 2009Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)citations
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