693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lamagna, L.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2020Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layerscitations
- 2014Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing methodcitations
- 2011The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer depositioncitations
- 2011Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)citations
- 2011Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasmacitations
- 2011Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectricscitations
- 2010O(3)-based atomic layer deposition of hexagonal La(2)O(3) films on Si(100) and Ge(100) substratescitations
- 2010O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substratescitations
- 2009Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stackscitations
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