693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Miglio, L.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2021Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowirescitations
- 2021Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulationscitations
- 2021Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundariescitations
- 2021Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillarscitations
- 2021Unveiling Planar Defects in Hexagonal Group IV Materialscitations
- 2019Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach
- 2019Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling
- 2019Multiple stacking fault formation via the evolution of related dislocations by molecular dynamics simulations
- 2019From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach.
- 2014Three-dimensional epitaxial Si 1-x Ge x , Ge and SiC crystals on deeply patterned Si substratescitations
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