People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Oehler, F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2017In situ passivation of GaAsP nanowirescitations
- 2016Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)
- 2015Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates
- 2014Polarized photoluminescence exciation spectroscopy of a plane InGaN/GaN multiple quantum wells grown on r plane sapphirecitations
- 2014Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE
- 2014Structure and strain relaxation effects of defects in InxGa1-xN epilayerscitations
- 2014Structure and strain relaxation effects of defects in In x Ga 1-x N epilayers
- 2013Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wellscitations
- 2010Rapid prototyping of electronic modules combining aerosol printing and ink jet printingcitations
Places of action
Organizations | Location | People |
---|