693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chaussende, D.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2013Polytypic transformations in SiC: Diffuse x-ray scattering and Monte Carlo simulationscitations
- 2013Polytypic transformations in SiC : diuse X-ray scattering and Monte Carlo simulationscitations
- 2012Diffuse X-ray scattering from partially transformed 3C-SiC single crystalscitations
- 2011Large area quasi-free standing monolayer graphene on 3C-SiC(111)citations
- 2010Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystalscitations
- 2010Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystalscitations
- 2009Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)
- 2009A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substratescitations
- 2009Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVDcitations
- 2008Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
- 2007Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scatteringcitations
- 2006High temperature silicon carbide chemical vapor deposition processes: From pure thermodynamic to mass transport modeling
- 2006X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystalscitations
- 2005Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism
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