693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bierwagen, Oliver
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Polar discontinuity governs surface segregation and interface termination: A case study of LaInO$_3$/BaSnO$_3$citations
- 2024Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
- 2024Polar discontinuity governs surface segregation and interface termination: A case study of LaIn O3/ BaSn O3
- 2022Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneitycitations
- 2021Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)<SUB>2</SUB>O<SUB>3</SUB> alloy filmscitations
- 2021Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains
- 2020Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)citations
- 2014Schottky contacts to In2O3citations
- 2011Applicability of molecular beam deposition for the growth of high-k oxidescitations
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