693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dawson, P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2022Cubic GaN and InGaN/GaN quantum wellscitations
- 2018Design and fabrication of plasmonic cavities for magneto-optical sensing (article)citations
- 2018Design and fabrication of plasmonic cavities for magneto-optical sensingcitations
- 2018Effect of stacking faults on the photoluminescence spectrum of zincblende GaNcitations
- 2018Effect of stacking faults on the photoluminescence spectrum of zincblende GaNcitations
- 2014Polarized photoluminescence exciation spectroscopy of a plane InGaN/GaN multiple quantum wells grown on r plane sapphirecitations
- 2014Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE
- 2012Solution-based synthesis of cobalt-doped ZnO thin filmscitations
- 2012Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r-plane sapphirecitations
- 2012Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wellscitations
- 2012Modification of carrier localization in basal-plane stacking faults:The effect of Si-doping in a-plane GaNcitations
- 2011The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substratescitations
- 2010Electronic and optical properties of nonpolar a-plane GaN quantum wellscitations
- 2010Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowthcitations
- 2009Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substratescitations
- 2008Properties of non-polar a-plane GaN/AlGaN quantum wellscitations
- 2008Optical properties of GaN/AlGaN quantum wells grown on nonpolar substratescitations
- 2001Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped siliconcitations
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