693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bol, Ageeth A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Nb Doping and Alloying of 2D WS 2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalystscitations
- 2024Structural Aspects of MoSx Prepared by Atomic Layer Deposition for Hydrogen Evolution Reactioncitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS 2 thin filmscitations
- 2023ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistorscitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Effects of the Structure and Temperature on the Nature of Excitons in the Mo 0.6 W 0.4 S 2 Alloycitations
- 2022Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS 2 FETscitations
- 2022Controlling transition metal atomic ordering in two-dimensional Mo 1- x W x S 2 alloyscitations
- 2021Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiSx‑NbSx Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabricationcitations
- 2021On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performancecitations
- 2021Effects of the Structure and Temperature on the Nature of Excitons in the Mo 0.6 W 0.4 S 2 Alloycitations
- 2020Cu electrodeposition on nanostructured MoS2 and WS2 and implications for HER active site determinationcitations
- 2020Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayerscitations
- 2020Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applicationscitations
- 2020Probing the origin and suppression of vertically oriented nanostructures of 2D WS2 layerscitations
- 2020Relating the 3D geometry and photoelectrochemical activity of WO 3 -loaded N-Si nanowires:Design rules for photoelectrodescitations
- 2020Synthesis of edge-enriched WS 2 on high surface area WS 2 framework by atomic layer deposition for electrocatalytic hydrogen evolution reactioncitations
- 2019Edge-site nano-engineering of WS2 by low temperature plasma-enhanced atomic layer deposition for electrocatalytic hydrogen evolutioncitations
- 2018Pt-graphene contacts fabricated by plasma functionalization and atomic layer depositioncitations
- 2018Bottom-up meets top-down:Tailored raspberry-like Fe 3 O 4 -Pt nanocrystal superlatticescitations
- 2018Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activationcitations
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