693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cowern, N. E. B.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2008Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctionscitations
- 2008Structural and electrical characterisation of ion-implanted strained siliconcitations
- 2006Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
- 2006Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2004Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions ; Das gegenwärtige Verständnis und die Modellierung der Diffusion und Aktivierung von Bor in voramorphisierten ultraflachen p-n Übergängen
- 2000Ultrashallow junction formation and gate activation in deep-submicron CMOS
- 2000Ultrashallow junction formation and gate activation in deep-submicron CMOS
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