693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Saint-Girons, G.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (53/53 displayed)
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2017GaAs Core / SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy
- 2014Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performancecitations
- 2008De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layercitations
- 2007Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(0 0 1) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxycitations
- 2007InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
- 2007Density of InAsInP (001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth ratescitations
- 2006Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxycitations
- 2006Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAsInP (001) quantum dotcitations
- 2006Indium incorporation in In-rich Inx Ga1-x As GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dotscitations
- 2006InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
- 2006Thermodynamical analysis of the shape and size dispersion of InAs InP (001) quantum dotscitations
- 2006Initial stage of the overgrowth of InP on InAs/InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edgescitations
- 2006Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the InAs/InP (001) system: Experiment and theorycitations
- 2006Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE
- 2006Nanoepitaxy of InAsInP quantum dots by metalorganic vapor phase epitaxy for 1.55 μm emitterscitations
- 2005Stress-driven self-ordering of III-V nanostructurescitations
- 2005Stress-engineered orderings of self-assembled III-V semiconductor nanostructurescitations
- 2005Dynamics of carrier-capture processes in Ga <inf>0.47</inf>in <inf>0.53</inf>As/InP near-surface quantum wells
- 2005InAs/InP (001) quantum dots emitting at 1.55 μm grown by low-pressure metalorganic vapor-phase epitaxycitations
- 2005Electroabsorption spectroscopy of GeSi self-assembled islandscitations
- 2005Carrier dynamics in Ga <inf>0.53</inf>In <inf>0.47</inf>AsInP near-surface quantum wellscitations
- 2005InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates
- 2005Dislocation networks adapted to order the growth of III-V semiconductor nanostructurescitations
- 2005Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substratecitations
- 20041.55 μm VCSELs with InP/air-gap distributed bragg reflectors
- 2004Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dotscitations
- 2004Photonics, electronics and silicon-germanium: A possible convergence?
- 2004Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate
- 2004Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructurescitations
- 2004Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: Reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injectioncitations
- 2003MOVPE growth and characterization of long-wavelength emitting quantum dots based lasers at 300 K
- 2003Continuous-wave operation of monolithically grown 1.5-μm optically pumped vertical-external-cavity surface-emitting laserscitations
- 2003A fast quantum-well semiconductor saturable-absorber mirror with low losses for sub-ps passively mode-locked lasercitations
- 2003Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substratecitations
- 2003Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islandscitations
- 2003Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islandscitations
- 2003A new kind of fast quantum-well semiconductor saturable-absorber mirror with low losses for ps pulse generation
- 2002Monolithic tunable InP-based vertical cavity surface emitting lasercitations
- 2002Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μmcitations
- 2002Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadeningcitations
- 2002Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2002Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dotscitations
- 2002Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islandscitations
- 2002Lasing operation under pulsed optical pumping of 1.55μm externalcavity VCSELs using an InP/AlGaInAs bottom Bragg reflector
- 2002<500-fs soliton pulse in a passively mode-locked surface-emitting laser with 100-mW average power
- 2002Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100-mW average powercitations
- 2001Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dotscitations
- 2001Bimodal distribution of indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2001(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength rangecitations
- 2001MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELscitations
- 20001.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral responsecitations
- 2000Optical and structural properties of 1.3 μm emitting InAs/GaAs quantum dots grown by LP-MOVPE as a function of the re-growth temperature
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