693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lefebvre, Pierre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2014ZnCdO/ZnO multiple quantum well nanowires emitting in the visible.
- 2013Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structurescitations
- 2012Excitonic effects in GaN stacking faults and crystal phase quantum wells
- 2012Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals.
- 2012Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires.
- 2012Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells.
- 2012Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: the model-case of GaN.citations
- 2012Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN
- 2012Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD.
- 2011Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures
- 2010Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN.
- 2010Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.citations
- 2010One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells.citations
- 2010Distortion of donor properties in III-nitride based nano-scale systems.
- 2010Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well.
- 2009Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaNcitations
- 2009Electron localization by a donor in the vicinity of a basal stacking fault in GaN.citations
- 2009Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxycitations
- 2009Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence.citations
- 2005k.P energy band structure of ZnO/Zn1-xMgxO quantum well heterostructurescitations
- 2004Carrier recombination processes in GaAsN: from the dilute limit to alloyingcitations
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