693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chassagne, T.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2012Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiCcitations
- 2010Epitaxial graphene on cubic SiC"111./Si"111. substratecitations
- 20088H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?
- 2007Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
- 2007Screening the built-in electric field in 4H silicon carbide stacking faultscitations
- 2007Cathodoluminescence investigation of stacking faults extension in 4H-SiCcitations
- 2006Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
- 2006Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiCcitations
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