693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khiat, Ali
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2019An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stackscitations
- 2019A digital in-analogue out logic gate based on metal-oxide memristor devices
- 2019An electrical characterisation methodology for identifying the switching mechanism in TiO 2 memristive stackscitations
- 2018Processing big-data with memristive technologiescitations
- 2018A comprehensive technology agnostic RRAM characterisation protocol
- 2018Interface barriers at Metal – TiO2 contacts
- 2017Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristicscitations
- 2017Impact of ultra-thin Al 2 O 3–y layers on TiO 2–x ReRAM switching characteristicscitations
- 2016X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devicescitations
- 2016An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margincitations
- 2016Engineering the switching dynamics of TiOx-based RRAM with Al dopingcitations
- 2016Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
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