693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gogneau, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2012Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)citations
- 2011Selective growth of site-controlled quantum dots
- 2011P and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactorcitations
- 2010One step nano-selective area growth of localized InAs/InP quantum dots for single photon source applications
- 2010Engineering of InAsP/InP quantum dot emission for long-distance quantum communications
- 2009Single photon sources using InAs/InP quantum dotscitations
- 2009First results on the APOLLON project multi-approach for high efficiency integrated and intelligent concentrating PV modules (systems)citations
- 2009Threshold and dynamic characteristics of photonic crystal nanolasers
- 2008One step nano slective area growth of localized InAs/InP quantum dots for single photon source applications
- 2008One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applicationscitations
- 2008Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 μm applications: Growth, structural, and optical propertiescitations
- 2008InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy
- 2008Tuning InAs/InP(001) quantum dot emission from 1.55 TO 2 mu;m by varying cap-layer growth rate in metalorganic vapor phase epitaxy
- 2008Time-resolved characterization of InAsPInP quantum dots emitting in the C -band telecommunication windowcitations
- 2007Density of InAsInP (001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth ratescitations
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