693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rouf, Polla
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and watercitations
- 2022Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer depositioncitations
- 2021Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition
- 2021Time-resolved CVD of Group 13-Nitrides
- 2021Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Designcitations
- 2021Surface ligand removal in atomic layer deposition of GaN using triethylgalliumcitations
- 2020In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Depositioncitations
- 2020Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminumcitations
- 2020Chemical vapor deposition of metallic films using plasma electrons as reducing agentscitations
- 2019Atomic layer deposition of InN using trimethylindium and ammonia plasmacitations
Places of action
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