693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ojamäe, Lars
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Surface chemical mechanisms of trimethyl aluminum in atomic layer deposition of AlNcitations
- 2022Understanding indium nitride thin film growth under ALD conditions by atomic scale modelling : From the bulk to the In-rich layercitations
- 2022Surface Structures from NH(3) Chemisorption in CVD and ALD of AlN, GaN, and InN Filmscitations
- 2020In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Depositioncitations
- 2020Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminumcitations
- 2018Nucleation of titanium nanoparticles in an oxygen-starved environment. II: theorycitations
- 2018Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Speciescitations
- 2018Growth Mechanism of SiC CVD: Surface Etching by H-2, H Atoms, and HClcitations
- 2017Ab Initio Study of Growth Mechanism of 4H-SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3citations
- 2013Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computationscitations
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