693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Greene, J. E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2018Growth and mechanical properties of 111-oriented V0.5Mo0.5Nx/Al2O3(0001) thin filmscitations
- 2015Control of Ti 1− x Si x N nanostructure via tunable metal-ion momentum transfer during HIPIMS/DCMS co-depositioncitations
- 2014Effect of WN content on toughness enhancement in V1−xWxN/MgO(001) thin filmscitations
- 2013Epitaxial V0.6W0.4N/MgO(001): Evidence for ordering on the cation sublatticecitations
- 2013Toughness enhancement in hard ceramic thin films by alloy designcitations
- 2012The Si 3 N 4 /TiN interface: 3. Si 3 N 4 /TiN(001) grown with a ―150 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopycitations
- 2012The Si 3 N 4 /TiN interface: 6. Si/TiN(001) grown and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy
- 2012The Si 3 N 4 /TiN interface: 5. TiN/Si 3 N 4 grown and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy
- 2012The Si 3 N 4 /TiN interface: 4. Si 3 N 4 /TiN(001) grown with a ―250 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopycitations
- 2012The Si 3 N 4 /TiN interface: 2. Si 3 N 4 /TiN(001) grown with a ―7 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopycitations
- 2012The Si 3 N 4 /TiN interface: 7. Ti/TiN(001) grown and analyzed in situ using X-ray photoelectron spectroscopycitations
- 2011Electronic structure of the SiN x /TiN interface: a model system for superhard nanocompositescitations
- 2005Epitaxial and polycrystalline HfNx (0.8⩽x⩽1.5) layers on MgO(001): Film growth and physical propertiescitations
- 2005Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thicknesscitations
- 2004Growth and physical properties of epitaxial HfN layers on MgO(001)citations
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