693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reitmeier, Zj
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2005Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxycitations
- 2005Transmission electron microscopy study of nonpolar a-plane GaN grown by pendeo-epitaxy on (11(2)under-bar0) 4H-SiC
- 2004Characterization and comparison of 4H-SiC(11(2)over-bar0) and 4H-SiC(0001) 8 degrees off-axis substrates and homoepitaxial films
- 2003Growth and characterization of epitaxial GaN thin films on 4H-SiC (11.0) substrates
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