693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bougrioua, Zahia
Campo Arqueologico de Mertola
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin filmscitations
- 2021Thermoelectric properties of nanostructured porous-polysilicon thin filmscitations
- 2005Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodescitations
- 2005Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructurescitations
- 2003Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistorscitations
- 2003Evidence of an impurity band at an n-GaN/sapphire interfacecitations
- 2003Detailed interpretation of electron transport in n-GaNcitations
- 2002Multiple parallel conduction paths observed in depth-profiled n-GaN epilayerscitations
- 2002Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 Ncitations
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