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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kuball, Martin H. H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2022Self-assembled microstructures with localized graphene domains in an epoxy blend and their related propertiescitations
- 2021Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets.citations
- 2021Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheetscitations
- 2020Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlNcitations
- 2019Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modificationcitations
- 2018Determination of the self-compensation ratio of carbon in AlGaN for HEMTscitations
- 2017Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETscitations
- 2015Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interfacecitations
- 2015Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 Vcitations
- 2014Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistorscitations
- 2009Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layerscitations
- 2007Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
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