693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cristiano, Fuccio
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
- 2023Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloyscitations
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2022Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealingcitations
- 2022Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Filmscitations
- 2022Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealingcitations
- 2022Multiscale modeling of ultrafast melting phenomenacitations
- 2022Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAscitations
- 2021Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substratecitations
- 2021Stress relaxation and dopant activation in nsec laser annealed SiGe
- 2021Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Studycitations
- 2021Laser annealing processes in semiconductor technology
- 2021Laser annealing processes in semiconductor technology ; Laser annealing processes in semiconductor technology: Theory, modeling, and applications in nanoelectronics
- 2020Implant heating contribution to amorphous layer formation: a KMC approachcitations
- 2020Undoped SiGe material calibration for numerical nanosecond laser annealing simulationscitations
- 2019On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted siliconcitations
- 2019Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures
- 2018Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors:investigation of interfacial and structural propertiescitations
- 2017Structural and mechanical characterization of hybrid metallic-inorganic nanosprings
- 2017Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Defect investigation of excimer laser annealed silicon
- 2016Differential Hall characterisation of shallow strained SiGe layers
- 2014Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealingcitations
- 2014Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2013Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties
- 2008Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealingcitations
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