693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Borg, Mattias
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealingcitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growthcitations
- 2022Template-Assisted Selective Epitaxy of InAs on W
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2019Integration of InSb on Si by Rapid Melt Growth
- 2017High-mobility GaSb nanostructures cointegrated with InAs on Sicitations
- 2017Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxycitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal qualitycitations
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